IPAW60R600CE 60S600CE

 Type Designator: IPAW60R600CE

   Marking Code: 60S600CE

   Type of Transistor: MOSFET

   Type of Control Channel: N -Channel

   Pdⓘ - Maximum Power Dissipation: 28 W

   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V

   |Id|ⓘ - Maximum Drain Current: 10.3 A

   Tjⓘ - Maximum Junction Temperature: 150 °C

   Qgⓘ - Total Gate Charge: 20.5 nC

   trⓘ - Rise Time: 8 nS

   Cossⓘ - Output Capacitance: 30 pF

   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

   Package: TO220FPWC